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TP65H150G4PS
Part Number Overview
Manufacturer Part Number
TP65H150G4PS
Description
GAN FET N-CH 650V TO-220
Detailed Description
N-Channel 650 V 16A (Tc) 83W (Tc) Through Hole TO-220AB
Manufacturer
Transphorm
Standard LeadTime
16 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
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Technical specifications
Mfr
Transphorm
Series
SuperGaN®
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
598 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TP65H150G4PS
Documents & Media
Datasheets
1(TP65H150G4PS)
Quantity Price
Quantity: 2000
Unit Price: $3.51354
Packaging: Tube
MinMultiplier: 1
Quantity: 1000
Unit Price: $3.74962
Packaging: Tube
MinMultiplier: 1
Quantity: 500
Unit Price: $4.16624
Packaging: Tube
MinMultiplier: 1
Quantity: 100
Unit Price: $4.7218
Packaging: Tube
MinMultiplier: 1
Quantity: 50
Unit Price: $5.2772
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $6.61
Packaging: Tube
MinMultiplier: 1
Substitutes
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