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Part Number Overview
Manufacturer Part Number
NTLJS1102PTAG
Description
MOSFET P-CH 8V 3.7A 6WDFN
Detailed Description
P-Channel 8 V 3.7A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
µCool™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
36mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id
720mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Vgs (Max)
±6V
Input Capacitance (Ciss) (Max) @ Vds
1585 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WDFN (2x2)
Package / Case
6-WDFN Exposed Pad
Base Product Number
NTLJS11
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-NTLJS1102PTAG
ONSONSNTLJS1102PTAG
2156-NTLJS1102PTAG-ONTR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTLJS1102PTAG
Documents & Media
Datasheets
1(NTLJS1102P)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Apr/2010)
HTML Datasheet
1(NTLJS1102P)
Quantity Price
-
Substitutes
-