China
Spain
Rusia
Italy
GermanyFQA19N20C
Part Number Overview
Manufacturer Part Number
FQA19N20C
Description
MOSFET N-CH 200V 21.8A TO3P
Detailed Description
N-Channel 200 V 21.8A (Tc) 180W (Tc) Through Hole TO-3P
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQA19N20C Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
21.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA1
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA19N20C
Documents & Media
Datasheets
1(FQA19N20C)
Environmental Information
()
HTML Datasheet
1(FQA19N20C)
EDA Models
1(FQA19N20C Models)
Quantity Price
-
Substitutes
-