China
Spain
Rusia
Italy
Germany2SD864K
Part Number Overview
Manufacturer Part Number
2SD864K
Description
POWER BIPOLAR TRANSISTOR, 3A, 12
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 120 V 3 A 30 W Through Hole TO-220ABS
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
187
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
3V @ 30mA, 3A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1.5A, 3V
Power - Max
30 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220ABS
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
RENRNS2SD864K
2156-2SD864K
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD864K
Documents & Media
Datasheets
1(2SD864K Datasheet)
Quantity Price
Quantity: 187
Unit Price: $1.61
Packaging: Bulk
MinMultiplier: 187
Packaging: Bulk
MinMultiplier: 187
Substitutes
-