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Part Number Overview
Manufacturer Part Number
IRFH5302DTRPBF
Description
MOSFET N-CH 30V 29A/100A PQFN
Detailed Description
N-Channel 30 V 29A (Ta), 100A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount PQFN (5x6) Single Die
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRFH5302DTRPBF Models
Standard Package
4,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3635 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PQFN (5x6) Single Die
Package / Case
8-PowerVDFN
Base Product Number
IRFH5302
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IRFH5302DTRPBFDKR
448-IRFH5302DTRPBFTR
IRFH5302DTRPBF-ND
448-IRFH5302DTRPBFCT
SP001570962
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH5302DTRPBF
Documents & Media
Datasheets
1(IRFH5302DPBF)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFH5302DPBF)
EDA Models
1(IRFH5302DTRPBF Models)
Simulation Models
1(IRFH5302DPBF Spice Model)
Quantity Price
-
Substitutes
Part No. : AONS62614T
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