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IRFW630BTM_FP001
Part Number Overview
Manufacturer Part Number
IRFW630BTM_FP001
Description
9A, 200V, 0.4OHM, N-CHANNEL
Detailed Description
N-Channel 200 V 9A (Tc) 3.13W (Ta), 72W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks
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Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCIRFW630BTM_FP001
2156-IRFW630BTM_FP001
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRFW630BTM_FP001
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 800
Unit Price: $0.43
Packaging: Bulk
MinMultiplier: 800
Substitutes
-
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