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Part Number Overview
Manufacturer Part Number
FQI3P50TU
Description
MOSFET P-CH 500V 2.7A I2PAK
Detailed Description
P-Channel 500 V 2.7A (Tc) 3.13W (Ta), 85W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQI3P50TU Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.9Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 85W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQI3P50TU
Documents & Media
Datasheets
1(FQB3P50, FQI3P50)
Environmental Information
()
HTML Datasheet
1(FQB3P50, FQI3P50)
EDA Models
1(FQI3P50TU Models)
Quantity Price
-
Substitutes
-