China
Spain
Rusia
Italy
GermanyAR1L3N-AZ
Part Number Overview
Manufacturer Part Number
AR1L3N-AZ
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 60 V 1 A 750 mW Through Hole TO-92
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
738
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
750 mW
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RENRNSAR1L3N-AZ
2156-AR1L3N-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Renesas Electronics Corporation AR1L3N-AZ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 738
Unit Price: $0.41
Packaging: Bulk
MinMultiplier: 738
Packaging: Bulk
MinMultiplier: 738
Substitutes
-