China
Spain
Rusia
Italy
GermanyIPU60R2K0C6AKMA1
Part Number Overview
Manufacturer Part Number
IPU60R2K0C6AKMA1
Description
MOSFET N-CH 600V 2.4A TO251-3
Detailed Description
N-Channel 600 V 2.4A (Tc) 22.3W (Tc) Through Hole PG-TO251-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
22.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
IPU60R
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFIPU60R2K0C6AKMA1
SP001399934
2156-IPU60R2K0C6AKMA1-IT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU60R2K0C6AKMA1
Documents & Media
Datasheets
1(IPU60R2K0C6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPU60R2K0C6)
Simulation Models
1(CoolMOS™ Power MOSFET 600V C6 Spice Model)
Quantity Price
-
Substitutes
-