China
Spain
Rusia
Italy
Germany2SB1133R
Part Number Overview
Manufacturer Part Number
2SB1133R
Description
POWER BIPOLAR TRANSISTOR, PNP
Detailed Description
Bipolar (BJT) Transistor PNP 60 V 3 A 40MHz 2 W Through Hole TO-220ML
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
740
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 5V
Power - Max
2 W
Frequency - Transition
40MHz
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SB1133R
ONSONS2SB1133R
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB1133R
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 740
Unit Price: $0.41
Packaging: Bulk
MinMultiplier: 740
Packaging: Bulk
MinMultiplier: 740
Substitutes
-