China
Spain
Rusia
Italy
GermanyIRFL4105
Part Number Overview
Manufacturer Part Number
IRFL4105
Description
MOSFET N-CH 55V 3.7A SOT223
Detailed Description
N-Channel 55 V 3.7A (Ta) 1W (Ta) Surface Mount SOT-223
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
80
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
45mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRFL4105
SP001554898
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFL4105
Documents & Media
Datasheets
1(IRFL4105)
Other Related Documents
1(IR Part Numbering System)
Design Resources
1(IRFL4105TR Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFL4105)
Quantity Price
-
Substitutes
-