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G3R20MT12N
Part Number Overview
Manufacturer Part Number
G3R20MT12N
Description
SIC MOSFET N-CH 105A SOT227
Detailed Description
N-Channel 1200 V 105A (Tc) 365W (Tc) Chassis Mount SOT-227
Manufacturer
GeneSiC Semiconductor
Standard LeadTime
26 Weeks
Edacad Model
Standard Package
10
Supplier Stocks
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Technical specifications
Mfr
GeneSiC Semiconductor
Series
G3R™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
219 nC @ 15 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
5873 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
365W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227
Package / Case
SOT-227-4, miniBLOC
Base Product Number
G3R20
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor G3R20MT12N
Documents & Media
Datasheets
1(G3R20MT12N)
Quantity Price
Quantity: 100
Unit Price: $47.7191
Packaging: Tube
MinMultiplier: 1
Quantity: 25
Unit Price: $50.1272
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $51.785
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $56.2
Packaging: Tube
MinMultiplier: 1
Substitutes
-
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