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Part Number Overview
Manufacturer Part Number
FDB8160
Description
MOSFET N-CH 30V 80A D2PAK
Detailed Description
N-Channel 30 V 80A (Tc) 254W (Tc) Surface Mount TO-263AB
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
177
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
243 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11825 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
254W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FDB816
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FDB8160
FAIFSCFDB8160
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDB8160
Documents & Media
Datasheets
1(FDB8160)
Quantity Price
Quantity: 177
Unit Price: $1.7
Packaging: Bulk
MinMultiplier: 177
Packaging: Bulk
MinMultiplier: 177
Substitutes
-