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Part Number Overview
Manufacturer Part Number
2SA1382,T6MIBF(J
Description
TRANS PNP 50V 2A TO92MOD
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 2 A 110MHz 900 mW Through Hole TO-92MOD
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 33mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA, 2V
Power - Max
900 mW
Frequency - Transition
110MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Base Product Number
2SA1382
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2SA1382T6MIBF(J
2SA1382T6MIBFJ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SA1382,T6MIBF(J
Documents & Media
Datasheets
1(2SA1382)
HTML Datasheet
1(2SA1382)
Quantity Price
-
Substitutes
-