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Part Number Overview
Manufacturer Part Number
2SC5201,T6MURAF(J
Description
TRANS NPN 600V 0.05A TO92MOD
Detailed Description
Bipolar (BJT) Transistor NPN 600 V 50 mA 900 mW Through Hole TO-92MOD
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
50 mA
Voltage - Collector Emitter Breakdown (Max)
600 V
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 20mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 20mA, 5V
Power - Max
900 mW
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Base Product Number
2SC5201
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2SC5201T6MURAFJ
2SC5201T6MURAF(J
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SC5201,T6MURAF(J
Documents & Media
Datasheets
1(2SC5201)
HTML Datasheet
1(2SC5201)
Quantity Price
-
Substitutes
-