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Part Number Overview
Manufacturer Part Number
FDS6900AS-G
Description
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Detailed Description
Mosfet Array 30V 6.9A, 8.2A 900mW (Ta) Surface Mount 8-SOIC
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
PowerTrench®, SyncFET™
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6.9A, 8.2A
Rds On (Max) @ Id, Vgs
27mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 15V
Power - Max
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
FDS69
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
488-FDS6900AS-GTR
2832-FDS6900AS-GTR
2832-FDS6900AS-G-488
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi FDS6900AS-G
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 8/Apr/2021)
Quantity Price
-
Substitutes
-