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Part Number Overview
Manufacturer Part Number
RN4982FE,LF(CT
Description
TRANS NPN/PNP PREBIAS 0.1W ES6
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
12 Weeks
Edacad Model
RN4982FE,LF(CT Models
Standard Package
4,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN4982
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RN4982FE(T5LFT)CT
RN4982FELF(CBDKR
RN4982FELF(CBDKR-ND
RN4982FELF(CTDKR
RN4982FELF(CBCT
RN4982FELF(CBCT-ND
RN4982FELF(CTTR
RN4982FE,LF(CB
RN4982FE(T5LFT)TR
RN4982FE(T5LFT)DKR-ND
RN4982FE(T5L,F,T)
RN4982FELF(CBTR-ND
RN4982FE(T5LFT)DKR
RN4982FELF(CTCT
RN4982FELF(CBTR
RN4982FE(T5LFT)TR-ND
RN4982FE(T5LFT)CT-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN4982FE,LF(CT
Documents & Media
Datasheets
1(RN4982FE)
EDA Models
1(RN4982FE,LF(CT Models)
Quantity Price
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