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Part Number Overview
Manufacturer Part Number
PBSS4230PANP,115
Description
NOW NEXPERIA PBSS4230PANP - SMAL
Detailed Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 30V 2A 120MHz 510mW Surface Mount 6-HUSON (2x2)
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,764
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
1 NPN, 1 PNP
Current - Collector (Ic) (Max)
2A
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
290mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
510mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)
Base Product Number
PBSS4230
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
NEXNXPPBSS4230PANP,115
2156-PBSS4230PANP,115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. PBSS4230PANP,115
Documents & Media
Datasheets
1(PBSS4230PANP,115 Datasheet)
Quantity Price
Quantity: 1764
Unit Price: $0.17
Packaging: Bulk
MinMultiplier: 1764
Packaging: Bulk
MinMultiplier: 1764
Substitutes
-