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Part Number Overview
Manufacturer Part Number
SIHB18N60E-GE3
Description
MOSFET N-CH 600V 18A TO263
Detailed Description
N-Channel 600 V 18A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
28 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
202mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB18
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB18N60E-GE3
Documents & Media
Datasheets
1(SIHB18N60E)
HTML Datasheet
1(SIHB18N60E)
Quantity Price
Quantity: 1000
Unit Price: $1.6383
Packaging: Tube
MinMultiplier: 1000
Packaging: Tube
MinMultiplier: 1000
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