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Part Number Overview
Manufacturer Part Number
FQI27N25TU
Description
MOSFET N-CH 250V 25.5A I2PAK
Detailed Description
N-Channel 250 V 25.5A (Tc) 3.13W (Ta), 180W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQI27N25TU Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12.75A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI27N25
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFQI27N25TU
2156-FQI27N25TU-OS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQI27N25TU
Documents & Media
Datasheets
1(FQI27N25TU Datasheet)
Environmental Information
()
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Material Chgs 14/Oct/2020)
PCN Packaging
()
EDA Models
1(FQI27N25TU Models)
Quantity Price
-
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