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Part Number Overview
Manufacturer Part Number
2SB647CTZ-E
Description
SMALL SIGNAL BIPOLAR TRANS PNP
Detailed Description
Bipolar (BJT) Transistor PNP 80 V 1 A 140MHz 900 mW Through Hole TO-92MOD
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
478
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 5V
Power - Max
900 mW
Frequency - Transition
140MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package
TO-92MOD
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2SB647CTZ-E
RENRNS2SB647CTZ-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB647CTZ-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 478
Unit Price: $0.63
Packaging: Bulk
MinMultiplier: 478
Packaging: Bulk
MinMultiplier: 478
Substitutes
-