China
Spain
Rusia
Italy
GermanyPMEM4030PS,115
Part Number Overview
Manufacturer Part Number
PMEM4030PS,115
Description
TRANS PNP 50V 2A 8SO
Detailed Description
Bipolar (BJT) Transistor PNP + Diode (Isolated) 50 V 2 A 100MHz 1 W Surface Mount 8-SO
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
PNP + Diode (Isolated)
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
390mV @ 300mA, 3A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
1 W
Frequency - Transition
100MHz
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
PMEM4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
PMEM4030PS T/R-ND
PMEM4030PS T/R
934057776115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PMEM4030PS,115
Documents & Media
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
Quantity Price
-
Substitutes
-