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Part Number Overview
Manufacturer Part Number
2SB1216T-E
Description
TRANS PNP 100V 4A TP
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 4 A 130MHz 1 W Through Hole TP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
2SB1216T-E Models
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 5V
Power - Max
1 W
Frequency - Transition
130MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
-
Supplier Device Package
TP
Base Product Number
2SB1216
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
ONSONS2SB1216T-E
2156-2SB1216T-E-ON
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB1216T-E
Documents & Media
Datasheets
1(2SB1216/2SD1816)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(1Q2018 Product EOL 31/Mar/2018)
EDA Models
1(2SB1216T-E Models)
Quantity Price
-
Substitutes
Part No. : 2SB1216S-TL-E
Manufacturer. : onsemi
Quantity Available. : 1,071
Unit Price. : $0.88000
Substitute Type. : Similar
Quantity Available. : 1,071
Unit Price. : $0.88000
Substitute Type. : Similar