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Part Number Overview
Manufacturer Part Number
SPB20N60S5ATMA1
Description
MOSFET N-CH 600V 20A TO263-3
Detailed Description
N-Channel 600 V 20A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
103 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SPB20N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPB20N60S5INTR
SPB20N60S5ATMA1CT
SPB20N60S5
SPB20N60S5INCT-ND
SPB20N60S5INDKR
SPB20N60S5INTR-ND
SPB20N60S5XT
SP000012112
SPB20N60S5ATMA1TR
SPB20N60S5INCT
SPB20N60S5-ND
SPB20N60S5ATMA1DKR
SPB20N60S5INDKR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPB20N60S5ATMA1
Documents & Media
Datasheets
1(SPB20N60S5)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPB20N60S5)
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