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Part Number Overview
Manufacturer Part Number
RF1S50N06SM9A
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 60 V 50A (Tc) 131W (Tc) Surface Mount TO-263AB
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
317
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2020 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
131W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-RF1S50N06SM9A
FAIFSCRF1S50N06SM9A
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor RF1S50N06SM9A
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 317
Unit Price: $0.95
Packaging: Bulk
MinMultiplier: 317
Packaging: Bulk
MinMultiplier: 317
Substitutes
-