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IPL65R650C6SATMA1
Part Number Overview
Manufacturer Part Number
IPL65R650C6SATMA1
Description
MOSFET N-CH 650V 6.7A THIN-PAK
Detailed Description
N-Channel 650 V 6.7A (Tc) 56.8W (Tc) Surface Mount PG-TSON-8-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
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Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ C6
Package
Tape & Reel (TR)
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
56.8W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSON-8-2
Package / Case
8-PowerTDFN
Base Product Number
IPL65R650
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001163082
2156-IPL65R650C6SATMA1
INFINFIPL65R650C6SATMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPL65R650C6SATMA1
Documents & Media
Datasheets
1(IPL65R650C6S)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPL65R650C6S)
Quantity Price
Quantity: 10000
Unit Price: $0.6985
Packaging: Tape & Reel (TR)
MinMultiplier: 5000
Quantity: 5000
Unit Price: $0.72242
Packaging: Tape & Reel (TR)
MinMultiplier: 5000
Substitutes
Part No. : GC11N65D5
Manufacturer. : Goford Semiconductor
Quantity Available. : 0
Unit Price. : $1.67000
Substitute Type. : Similar
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