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SIHB35N60EF-GE3
Part Number Overview
Manufacturer Part Number
SIHB35N60EF-GE3
Description
MOSFET N-CH 600V 32A D2PAK
Detailed Description
N-Channel 600 V 32A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
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Technical specifications
Mfr
Vishay Siliconix
Series
EF
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
134 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2568 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB35
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHB35N60EF-GE3CT-ND
SIHB35N60EF-GE3CTINACTIVE
SIHB35N60EF-GE3TR
SIHB35N60EF-GE3TR-ND
SIHB35N60EF-GE3DKR-ND
SIHB35N60EF-GE3DKRINACTIVE
SIHB35N60EF-GE3CT
SIHB35N60EF-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB35N60EF-GE3
Documents & Media
Datasheets
1(SIHB35N60EF)
Featured Product
1(MOSFETs in 5G)
HTML Datasheet
1(SIHB35N60EF)
Quantity Price
Quantity: 1000
Unit Price: $3.21018
Packaging: Bulk
MinMultiplier: 1
Quantity: 100
Unit Price: $4.2178
Packaging: Bulk
MinMultiplier: 1
Quantity: 50
Unit Price: $4.9208
Packaging: Bulk
MinMultiplier: 1
Quantity: 1
Unit Price: $6.21
Packaging: Bulk
MinMultiplier: 1
Substitutes
Part No. : FCB070N65S3
Manufacturer. : onsemi
Quantity Available. : 244
Unit Price. : $9.63000
Substitute Type. : Similar
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