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Part Number Overview
Manufacturer Part Number
ALD1110EPAL
Description
MOSFET 2N-CH 10V 8DIP
Detailed Description
Mosfet Array 10V 600mW Through Hole 8-PDIP
Manufacturer
Advanced Linear Devices Inc.
Standard LeadTime
Edacad Model
ALD1110EPAL Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Advanced Linear Devices Inc.
Series
EPAD®
Package
Tube
Product Status
Not For New Designs
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Matched Pair
FET Feature
-
Drain to Source Voltage (Vdss)
10V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
500Ohm @ 5V
Vgs(th) (Max) @ Id
1.01V @ 1µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
2.5pF @ 5V
Power - Max
600mW
Operating Temperature
0°C ~ 70°C (TJ)
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Supplier Device Package
8-PDIP
Base Product Number
ALD1110
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Advanced Linear Devices Inc. ALD1110EPAL
Documents & Media
Datasheets
1(ALD1108,10E)
HTML Datasheet
1(ALD1108,10E)
EDA Models
1(ALD1110EPAL Models)
Quantity Price
Quantity: 50
Unit Price: $6.0832
Packaging: Tube
MinMultiplier: 50
Packaging: Tube
MinMultiplier: 50
Substitutes
-