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Part Number Overview
Manufacturer Part Number
BSC091N03MSCGATMA1
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 30 V 12A (Ta), 44A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-6
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,154
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-6
Package / Case
8-PowerTDFN
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFBSC091N03MSCGATMA1
2156-BSC091N03MSCGATMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC091N03MSCGATMA1
Documents & Media
Datasheets
1(BSC091N03MSCGATMA1 Datasheet)
Quantity Price
Quantity: 1154
Unit Price: $0.26
Packaging: Bulk
MinMultiplier: 1154
Packaging: Bulk
MinMultiplier: 1154
Substitutes
-