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Part Number Overview
Manufacturer Part Number
APT35SM70B
Description
SICFET N-CH 700V 35A TO247-3
Detailed Description
N-Channel 700 V 35A (Tc) 176W (Tc) Through Hole TO-247-3
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
APT35SM70B Models
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
145mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1035 pF @ 700 V
FET Feature
-
Power Dissipation (Max)
176W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT35SM70B-ND
150-APT35SM70B
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT35SM70B
Documents & Media
Datasheets
1(APT35SM70B)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
HTML Datasheet
1(APT35SM70B)
EDA Models
1(APT35SM70B Models)
Quantity Price
-
Substitutes
-