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Part Number Overview
Manufacturer Part Number
FDI3632
Description
MOSFET N-CH 100V 12A/80A I2PAK
Detailed Description
N-Channel 100 V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
310W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FDI3632
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FDI3632-ND
FDI3632FS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDI3632
Documents & Media
Datasheets
1(FDB,P,I,H3632)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Obsolescence/ EOL
1(Multiple Devices 11/Mar/2013)
HTML Datasheet
1(FDB,P,I,H3632)
Quantity Price
-
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