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Part Number Overview
Manufacturer Part Number
APT70GR65B2SCD30
Description
INSULATED GATE BIPOLAR TRANSISTO
Detailed Description
IGBT NPT 650 V 134 A 595 W Through Hole T-MAX™ [B2]
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
134 A
Current - Collector Pulsed (Icm)
260 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 70A
Power - Max
595 W
Gate Charge
305 nC
Td (on/off) @ 25°C
19ns/170ns
Test Condition
433V, 70A, 4.3Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
T-MAX™ [B2]
Base Product Number
APT70GR65
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT70GR65B2SCD30-ND
150-APT70GR65B2SCD30
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microsemi Corporation APT70GR65B2SCD30
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Quantity Price
-
Substitutes
-