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Part Number Overview
Manufacturer Part Number
FQPF3N80CYDTU
Description
MOSFET N-CH 800V 3A TO220F-3
Detailed Description
N-Channel 800 V 3A (Tc) 39W (Tc) Through Hole TO-220F-3 (Y-Forming)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
423
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
705 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3 (Y-Forming)
Package / Case
TO-220-3 Full Pack, Formed Leads
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFQPF3N80CYDTU
2156-FQPF3N80CYDTU-FS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF3N80CYDTU
Documents & Media
Datasheets
1(FQPF3N80CYDTU)
Quantity Price
Quantity: 423
Unit Price: $0.71
Packaging: Tube
MinMultiplier: 423
Packaging: Tube
MinMultiplier: 423
Substitutes
-