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Part Number Overview
Manufacturer Part Number
RN2307(TE85L,F)
Description
TRANS PREBIAS PNP 50V 0.1A SC70
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
RN2307(TE85L,F) Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SC-70
Base Product Number
RN2307
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RN2307TE85LF
RN2307(TE85LF)CT
RN2307(TE85LF)
RN2307(TE85LF)-ND
RN2307(TE85LF)TR
RN2307(TE85LF)DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN2307(TE85L,F)
Documents & Media
Datasheets
1(RN2307 to RN2309)
Product Training Modules
1(General Purpose Discrete Items)
EDA Models
1(RN2307(TE85L,F) Models)
Quantity Price
-
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