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Part Number Overview
Manufacturer Part Number
GB05SLT12-220
Description
DIODE SIL CARB 1.2KV 5A TO220-2
Detailed Description
Diode 1200 V 5A Through Hole TO-220-2
Manufacturer
GeneSiC Semiconductor
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
GeneSiC Semiconductor
Series
-
Package
Bulk
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
5A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 2 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Capacitance @ Vr, F
260pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
GB05SLT12
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
GB05SLT12220
1242-1128
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/GeneSiC Semiconductor GB05SLT12-220
Documents & Media
Featured Product
1(Silicon Carbide Schottky Diode)
Quantity Price
-
Substitutes
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