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Part Number Overview
Manufacturer Part Number
SSM6N7002BFU(T5L,F
Description
MOSFET 2N-CH 60V 0.2A US6
Detailed Description
Mosfet Array 60V 200mA 300mW Surface Mount US6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
200mA
Rds On (Max) @ Id, Vgs
2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
17pF @ 25V
Power - Max
300mW
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
SSM6N7002
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
SSM6N7002BFU(T5LFDKR
SSM6N7002BFULF(TTR-ND
SSM6N7002BFULF(TTR
SSM6N7002BFULF(TDKR-ND
SSM6N7002BFULF(TDKR
SSM6N7002BFULF(TCT
SSM6N7002BFU(T5LFCT
SSM6N7002BFU(T5LFTR
SSM6N7002BFULF(TCT-ND
SSM6N7002BFUT5LF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Toshiba Semiconductor and Storage SSM6N7002BFU(T5L,F
Documents & Media
Datasheets
()
Product Training Modules
1(Small Signal MOSFET)
HTML Datasheet
()
Product Drawings
()
Quantity Price
-
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