China
Spain
Rusia
Italy
GermanyIPS09N03LA G
Part Number Overview
Manufacturer Part Number
IPS09N03LA G
Description
MOSFET N-CH 25V 50A TO251-3
Detailed Description
N-Channel 25 V 50A (Tc) 63W (Tc) Through Hole PG-TO251-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1642 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-11
Base Product Number
IPS09N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPS09N03LA G-ND
IPS09N03LAG
IPS09N03LAGX
SP000015131
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS09N03LA G
Documents & Media
Datasheets
1(IPx09N03LA G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx09N03LA G)
Quantity Price
-
Substitutes
-