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Part Number Overview
Manufacturer Part Number
IRFHM830DTR2PBF
Description
MOSFET N-CH 30V 20A PQFN
Detailed Description
N-Channel 30 V 20A (Ta), 40A (Tc) Surface Mount PQFN (3x3)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
400
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1797 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PQFN (3x3)
Package / Case
8-VQFN Exposed Pad
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRFHM830DTR2PBFTR
SP001551956
IRFHM830DTR2PBFCT
IRFHM830DTR2PBFDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFHM830DTR2PBF
Documents & Media
Datasheets
1(IRFHM830DPbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFHM830DPbF)
Quantity Price
-
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