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Part Number Overview
Manufacturer Part Number
SCT20N120
Description
SICFET N-CH 1200V 20A HIP247
Detailed Description
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
SCT20N120 Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCT20
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCT20N120
Documents & Media
Datasheets
()
Product Training Modules
()
Featured Product
1(SCT20N120 and SCT30N120 Silicon-Carbide Power MOSFETs)
PCN Packaging
1(Standard outer labelling 15/Nov/2023)
HTML Datasheet
1(Fine Tune SIC MOSFET Gate Driver)
EDA Models
1(SCT20N120 Models)
Quantity Price
Quantity: 510
Unit Price: $11.34108
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $12.51433
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $13.29633
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $16.43
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
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