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Part Number Overview
Manufacturer Part Number
IRFI1010NPBF
Description
MOSFET N-CH 55V 49A TO220AB FP
Detailed Description
N-Channel 55 V 49A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRFI1010NPBF Models
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
58W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB Full-Pak
Package / Case
TO-220-3 Full Pack
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRFI1010NPBF
IFEINFIRFI1010NPBF
2156-IRFI1010NPBF
SP001570872
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFI1010NPBF
Documents & Media
Datasheets
1(IRFI1010NPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFI1010NPBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Barcode Label Update 24/Feb/2017)
HTML Datasheet
1(IRFI1010NPbF)
EDA Models
1(IRFI1010NPBF Models)
Simulation Models
1(IRFI1010NPBF Spice Model)
Quantity Price
-
Substitutes
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