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Part Number Overview
Manufacturer Part Number
PMPB50ENEA115
Description
SMALL SIGNAL FET
Detailed Description
N-Channel 30 V 5.1A (Ta) 1.9W (Ta), 11W (Tc) Surface Mount DFN2020MD-6
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
Standard Package
2,219
Supplier Stocks
Technical specifications
Mfr
Nexperia USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
43mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
271 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.9W (Ta), 11W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN2020MD-6
Package / Case
6-UDFN Exposed Pad
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
NEXNEXPMPB50ENEA115
2156-PMPB50ENEA115
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PMPB50ENEA115
Documents & Media
Datasheets
1(PMPB50ENE)
HTML Datasheet
1(PMPB50ENE)
Quantity Price
-
Substitutes
-