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JAN1N6622US
Part Number Overview
Manufacturer Part Number
JAN1N6622US
Description
DIODE GEN PURP 660V 1.2A D-5A
Detailed Description
Diode 660 V 1.2A Surface Mount D-5A
Manufacturer
Microchip Technology
Standard LeadTime
34 Weeks
Edacad Model
Standard Package
1
Supplier Stocks
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Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
660 V
Current - Average Rectified (Io)
1.2A
Voltage - Forward (Vf) (Max) @ If
1.4 V @ 1.2 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30 ns
Current - Reverse Leakage @ Vr
500 nA @ 660 V
Capacitance @ Vr, F
10pF @ 10V, 1MHz
Grade
Military
Qualification
MIL-PRF-19500/585
Mounting Type
Surface Mount
Package / Case
SQ-MELF, A
Supplier Device Package
D-5A
Operating Temperature - Junction
-65°C ~ 150°C
Base Product Number
1N6622
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
1086-19963-MIL
1086-19963
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Microchip Technology JAN1N6622US
Documents & Media
Datasheets
1(1N6620-25US)
Environmental Information
()
PCN Assembly/Origin
1(Manufacturing Change 23/Feb/2021)
Quantity Price
Quantity: 100
Unit Price: $12.3001
Packaging: Bulk
MinMultiplier: 100
Substitutes
-
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