China
Spain
Rusia
Italy
GermanyNSS40200UW6T1G
Part Number Overview
Manufacturer Part Number
NSS40200UW6T1G
Description
TRANS PNP 40V 2A 6WDFN
Detailed Description
Bipolar (BJT) Transistor PNP 40 V 2 A 140MHz 875 mW Surface Mount 6-WDFN (2x2)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 20mA, 2A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 1A, 2V
Power - Max
875 mW
Frequency - Transition
140MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Supplier Device Package
6-WDFN (2x2)
Base Product Number
NSS40200
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NSS40200UW6T1G-ND
ONSONSNSS40200UW6T1G
NSS40200UW6T1GOSCT
NSS40200UW6T1GOSDKR
NSS40200UW6T1GOSTR
2156-NSS40200UW6T1G-OS
2832-NSS40200UW6T1GTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi NSS40200UW6T1G
Documents & Media
Datasheets
1(NSS40200UW6T1G)
Product Training Modules
1(Low Vce(sat) BJT Power Savings)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Mar/2022)
PCN Design/Specification
1(Wire Bond 07/Sept/2011)
HTML Datasheet
1(NSS40200UW6T1G)
Quantity Price
-
Substitutes
Part No. : NSV40200UW6T1G
Manufacturer. : onsemi
Quantity Available. : 3,000
Unit Price. : $0.85000
Substitute Type. : Parametric Equivalent
Quantity Available. : 3,000
Unit Price. : $0.85000
Substitute Type. : Parametric Equivalent