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Part Number Overview
Manufacturer Part Number
FQI4N90TU
Description
POWER FIELD-EFFECT TRANSISTOR, 4
Detailed Description
N-Channel 900 V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Through Hole I2PAK (TO-262)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
254
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 140W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI4N90
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FQI4N90TU
ONSFSCFQI4N90TU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQI4N90TU
Documents & Media
Datasheets
1(FQI4N90TU Datasheet)
Quantity Price
Quantity: 254
Unit Price: $1.19
Packaging: Bulk
MinMultiplier: 254
Packaging: Bulk
MinMultiplier: 254
Substitutes
-