China
Spain
Rusia
Italy
GermanyFQAF7N90
Part Number Overview
Manufacturer Part Number
FQAF7N90
Description
MOSFET N-CH 900V 5.2A TO3PF
Detailed Description
N-Channel 900 V 5.2A (Tc) 107W (Tc) Through Hole TO-3PF
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
189
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.55Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2280 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQAF7N90-FS
FAIFSCFQAF7N90
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQAF7N90
Documents & Media
Datasheets
1(FQAF7N90)
Quantity Price
Quantity: 189
Unit Price: $1.59
Packaging: Tube
MinMultiplier: 189
Packaging: Tube
MinMultiplier: 189
Substitutes
-