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Part Number Overview
Manufacturer Part Number
2SC5706-P-E
Description
TRANS NPN 100V 5A TP
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 5 A 400MHz 800 mW Through Hole TP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bag
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
240mV @ 100mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 2V
Power - Max
800 mW
Frequency - Transition
400MHz
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Base Product Number
2SC5706
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
ONSONS2SC5706-P-E
2156-2SC5706-P-E-ON
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC5706-P-E
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 17/Apr/2019)
Quantity Price
-
Substitutes
-