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Part Number Overview
Manufacturer Part Number
FPF2G120BF07AS
Description
INSULATED GATE BIPOLAR TRANSISTO
Detailed Description
IGBT Module Field Stop 3 Independent 650 V 40 A 156 W Through Hole F2
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
3
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
Field Stop
Configuration
3 Independent
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
40 A
Power - Max
156 W
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 40A
Current - Collector Cutoff (Max)
250 µA
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
Module
Supplier Device Package
F2
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FPF2G120BF07AS
ONSFSCFPF2G120BF07AS
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Fairchild Semiconductor FPF2G120BF07AS
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 3
Unit Price: $103.14
Packaging: Bulk
MinMultiplier: 3
Packaging: Bulk
MinMultiplier: 3
Substitutes
-