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Part Number Overview
Manufacturer Part Number
MII100-12A3
Description
IGBT MODULE 1200V 135A 560W Y4M5
Detailed Description
IGBT Module NPT Half Bridge 1200 V 135 A 560 W Chassis Mount Y4-M5
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
6
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
135 A
Power - Max
560 W
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 75A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
5.5 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Y4-M5
Supplier Device Package
Y4-M5
Base Product Number
MII100
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/IXYS MII100-12A3
Documents & Media
Datasheets
1(MII100-12A3)
PCN Obsolescence/ EOL
()
HTML Datasheet
1(MII100-12A3)
Quantity Price
-
Substitutes
-