China
Spain
Rusia
Italy
GermanyFCH041N65EFL4
Part Number Overview
Manufacturer Part Number
FCH041N65EFL4
Description
POWER FIELD-EFFECT TRANSISTOR, N
Detailed Description
N-Channel 650 V 76A (Tc) 595W (Tc) Through Hole TO-247-4
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
FRFET®, SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
5V @ 7.6mA
Gate Charge (Qg) (Max) @ Vgs
298 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12560 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
595W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FCH041N65EFL4
ONSFSCFCH041N65EFL4
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCH041N65EFL4
Documents & Media
Datasheets
1(FCH041N65EFL4 Datasheet)
Quantity Price
Quantity: 30
Unit Price: $10.16
Packaging: Bulk
MinMultiplier: 30
Packaging: Bulk
MinMultiplier: 30
Substitutes
-