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Part Number Overview
Manufacturer Part Number
SI8441DB-T2-E1
Description
MOSFET P-CH 20V 10.5A 6MICROFOOT
Detailed Description
P-Channel 20 V 10.5A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.77W (Ta), 13W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-Micro Foot™ (1.5x1)
Package / Case
6-UFBGA
Base Product Number
SI8441
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI8441DB-T2-E1
Documents & Media
Environmental Information
()
HTML Datasheet
1(SI8441DB)
Quantity Price
-
Substitutes
-